Academic staff (m/f/d) – Linear Sub-THz InP HBT Electronics

BTU Cottbus-Senftenberg

Cottbus

InP electronics are gaining importance in high-performance applications in the sub-THz range. As part of a DFG-funded research project, the linearity of InP HBTs is to be researched and improved in a joint effort with the University of Duisburg-Essen and the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin. Your task within the project will be to derive a physics-based model of the transistors. This begins with numerical simulation (TCAD) of the device physics, includes the derivation of analytical descriptions of the transistor behavior and is intended to expand the compact FBH-HBT model and thus enable circuit design in InP-HBT technology. More Detail

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